A1020 A1020 Silicon PNP Epitaxial Transistor Description: The A1020 is designed for use in power amplifier applications and power switching applications Features: Low collector saturation voltage Complementary to C2328 Chip Appearance
Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base Emitter 760umx760um 21020um 160x170um 130x260um Al Au 60um 6 inch
Electrical Characteristics( Ta=25)
Characteristic Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector Saturation Voltage Symbol ICBO IEBO BVCBO BVCEO BVEBO hFE VCE(sat) Test Condition VCB=-35V, IE=0 VEB=-5V, IC=0 IC=-0.1mA IC=-10mA IE=-0.1mA VCE=-2V, IC=-0.5A IC=-1A, IB=-50mA -40 -30 -5.0 80 400 -0.5 V Min Max -0.1 -0.1 Unit uA uA V V V
May.2004
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